vishay general semiconductor M2035S & m2045s document number 88953 24-jul-06 www.vishay.com 1 high-voltage trench mos barrier schottky rectifier features ? guardring for overvoltage protection ? lower power losses, high efficiency ? low forward voltage drop ? high forward surge capability ? high frequency operation ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in low voltage, high frequency rectifier of switching mode power supplies, free-wheeling diodes, dc-to-dc converters or polarity protection applications. mechanical data case: to-220ab epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade polarity: as marked mounting torque: 10 in-lbs maximum to-220ab 1 2 3 1 2 case 3 major ratings and characteristics i f(av) 20 a v rrm 35 v, 45 v i fsm 200 a v f at i f = 20 a 0.55 v t j max. 150 c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol M2035S m2045s unit maximum repetitive peak reverse voltage v rrm 35 45 v maximum average forward rectified current (see fig. 1) i f(av) 20 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 200 a peak repetitive reverse current per leg at t p = 2 s, 1 khz i rrm 2.0 a voltage rate of change (rated v r ) dv/dt 10000 v/s operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com 2 document number 88953 24-jul-06 vishay general semiconductor M2035S & m2045s note: (1) pulse test: 300 s pulse width, 1 % duty cycle ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage (1) at i f = 10 a at i f = 20 a t j = 25 c v f 0.52 0.62 - 0.70 v at i f = 10 a at i f = 20 a t j = 125 c 0.42 0.55 - 0.61 maximum reverse current at rated v r (1) t j = 25 c t j = 125 c i r 80 24 200 35 a ma typical junction capacitance at 4.0 v, 1 mhz c j 700 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol M2035S m2045s unit typical thermal resistance r jc 2.0 c/w ordering information preferred p/n unit weight (g) preferred package code base quantity delivery mode m2045s-e3/4w 1.877 4w 50/tube tube figure 1. forward current derating curve 0 0 5 10 15 20 25 20 40 60 8 0 100 120 140 160 case temperat u re (c) a v erage for w ard c u rrent ( a) figure 2. maximum non-repetitive peak forward surge current t j = t j max. 8 .3 ms single half sine- w a v e 300 250 200 150 100 50 0 1 10 100 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a)
document number 88953 24-jul-06 www.vishay.com 3 M2035S & m2045s vishay general semiconductor package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 100 10 1.0 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j = 150 c t j = 125 c t j = 25 c t j = 150 c t j = 125 c t j = 25 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) 100 10 1.0 0.1 0.01 0.001 0.0001 10 20 30 40 50 60 70 8 0 90 100 figure 5. typical junction capacitance 10000 1000 100 0.1 1 10 100 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p re v erse v oltage ( v ) j u nction capaci tance (pf) t o-220ab 1 3 pi n 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.6 8 ) 0.135 (3.43) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) 0.154 (3.91) 0.14 8 (3.74) 0.113 (2. 8 7) 0.103 (2.62) 0.160 (4.06) 0.140 (3.56) 0.635 (16.13) 0.625 (15. 8 7) 0.415 (10.54) max. 0.370 (9.40) 0.360 (9.14) 0.02 8 (0.70) 0.104 (2.65) 0.096 (2.45) 0.035 (0.90) 0.205 (5.20) 0.195 (4.95) 0.105 (2.67) 0.095 (2.41) 0.057 (1.45) 0.045 (1.14) 2 1.14 8 (29.16) 1.11 8 (2 8 .40)
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